Company News
Jun 14, 2025 | Sumitomo Electric Device Innovations USA Showcases 2.4-2.5 GHz, 300W GaN Transistor at IMS 2025
Sumitomo Electric Device Innovations USA will showcase its High Power GaN-HEMTs for ISM-band (Industrial, Scientific, and Medical), microwave heating, and continuous-wave (CW) applications. The featured ES/SGN2425-300P device offers high power, high efficiency, easy matching, and consistent performance for 2.4–2.5 GHz high-power uses with 50V operation.